On August 8, the "ultraviolet optoelectronic device training meeting" sponsored by the national semiconductor lighting engineering R & D and Industry Alliance (CSA) and the third generation semiconductor industry technology innovation strategic alliance (CASA) was successfully held in Yangzhou Conference Center, and representatives of more than 40 units participated in the training. Ruan Jun, Executive Deputy Secretary General of CSA, attended the meeting and delivered a speech. He co hosted the training meeting with Professor Shen Bo of Peking University, Professor Kang Junyong of Xiamen University and Professor Lu Hai of Nanjing University.
Deputy Secretary General of CSA
Deputy Secretary General of CSA Ruan JunIn his speech, he said that as a new market direction of semiconductor lighting industry, UV optoelectronic devices have broad application prospects. In order to understand the technology progress of UV LED and detector, and cultivate high-quality compound talents who master the comprehensive knowledge of theory and practice, the alliance organized and invited professors and experts from the fields of extension, chip and packaging of UV optoelectronics to carry out the training meeting. We thank all the experts and teachers for arranging time to teach in their busy schedule. We hope that the trainees can fully grasp the learning opportunity At the same time, it also contributes to enterprises and industries.
Nitride semiconductors have great applications in semiconductor lighting, new generation mobile communication, new generation general power supply, radar and new energy vehicles. It has strategic significance for national industrial upgrading, energy conservation and emission reduction, and national defense security. At the same time, nitride semiconductor is also one of the key areas of global high-tech competition, in which AlN and AlGaN with high Al content are irreplaceable semiconductor materials for solid-state and UV light-emitting.
Professor Shen Bo, Peking University
Professor Shen Bo, deputy director of science department and deputy director of wide band gap semiconductor center, Peking University"Research on epitaxial growth of AIN on sapphire and deep UV LED devices". It is pointed out in the report that the epitaxial growth of AlN, high Al component AlGaN and their quantum structures and the development of duv-led still face a series of key scientific and technical problems due to heteroepitaxy, large mismatch and strong polarization within the system, and more systematic research is needed. High quality AlN and high Al component AlGaN epitaxial layers were prepared by high temperature annealing and "NPSs lateral epitaxy with small closure region". The FWHM of the rocking curve of the AlN layer is 132 (002) / 140 (102) arcsec, and the i-alngan layer (58% Al component) is 151 (002) / 235 (102) arcsec, and the wavelength of emission is 279nm, and the Iqe is more than 80%.
Professor Kang Junyong, Xiamen University
Professor Kang Junyong, Xiamen UniversityShare the theme report of "the mechanism and scientific problems of UV LED". In the report, the advantages of semiconductor ultraviolet light source are introduced firstly, and the key scientific issues such as LED luminous mechanism, ohmic contact of semiconductor / metal electrode, injection efficiency, internal quantum efficiency, luminous efficiency, efficiency decline and unbalanced growth are explained in detail.
Professor Chen Changqing, Huazhong University of science and technology
The development of deep UV LED industry is of great significance, which fully conforms to the national development strategy.Professor Chen Changqing, Huazhong University of science and technologyShare the theme report of UV LED technology and application. The report pointed out that in the UV light source market, the traditional mercury lamp is gradually replaced by UV-LED, and UV-LED has become the future technology development trend in the fields of UV curing, phototherapy, sterilization and disinfection. The near UV LED curing market is in a rapid growth period, CAGR ~ 23%, and the deep UV LED sterilization and purification market is in the initial stage of explosive growth, CAGR ~ 210%. Near UV LED technology is more mature and rapid development, and has been used in the field of photo curing, offset printing, optical fiber, liquid crystal and so on. The key point of the work is to realize the optical, thermal and structural collaborative matching and optimization of the chip and light source system. The performance of deep ultraviolet LED chip still needs to be improved. The preparation of high-quality AlGaN materials and the improvement of chip light extraction efficiency will be the research focus of deep UV LED in the future.
Professor Lu Hai, Nanjing University
Professor Lu Hai, Nanjing UniversityA detailed introduction to the topic report of "technology and application of ultraviolet detector". Firstly, the background and demand of technology application, the classification and basic knowledge of UV detector, the development status of UV detector technology, and the scientific and technical problems faced by UV detector are discussed in detail. Conventional GaN based and SiC UV detectors have reached the industrialization level, and are constantly expanding new applications; SiC UV single photon detector can achieve better performance for high maturity materials; wide band gap UV single photon detection technology is developing towards "imaging array". Wide band gap photodetectors may have new development in EUV and soft X-ray detection.
Professor Chen Mingxiang, Huazhong University of science and technology
Professor Chen Mingxiang, Huazhong University of science and technologyThis paper introduces the Research Report of UV / deep UV LED packaging technology. He said that UV LED technology has obvious advantages and has replaced mercury lamp as a new generation of ultraviolet light source. Light UV LED can adopt white LED packaging technology (material / structure / process), which is mainly used in the fields of light curing, photocatalysis, anti-counterfeiting, etc.; deep UV LED must adopt all inorganic packaging materials, airtight packaging, low-temperature welding, and improving light efficiency are the key technologies; deep UV LED devices are mainly used in sterilization / disinfection, and have broad prospects in the field of flowing air and water purification. Reliability and cost are the main factors affecting the application of deep UV LED devices.
Mr. Chen zhizhan, vice president of intellectual property consulting company
Mr. Chen zhizhan, vice president of intellectual property consulting companyThe special report of "analysis of UVLED patent technology" was shared. The rapid growth of global patents has entered the golden age of layout. Lighting, disinfection, medical and other applications will be the focus of future layout. The United States, Japan and South Korea have stepped up their steps in entering China. He suggested that in terms of the patent layout of UVLED technology, it is necessary to do a good job in coping with the risks of industrial intellectual property, establish the home advantage of industrial intellectual property, pay attention to tracking the global layout of major competitors, and strengthen the global distribution of industrial patents.
Dr. Wu Chaohui, Dongguan guoci New Material Technology Co., Ltd
Dr. Wu Chaohui, Dongguan guoci New Material Technology Co., LtdThe topic report of "UVLED ceramic packaging substrate and packaging technology" was brought. It is understood that the global market value of UVLED will reach US $1.23 billion in 2022, including US $900 million for deep UV LED and US $200 million for corresponding ceramic substrate, with an annual compound growth rate of 74%. In the future, deep UV packaging technology will develop towards higher energy density, and the deep UV LED market will face the comprehensive consideration of four factors: functionality, safety, convenience and cost performance.
Wei Xuecheng, researcher, Institute of semiconductors, Chinese Academy of Sciences
Wei Xuecheng, researcher, Institute of semiconductors, Chinese Academy of SciencesThe topic report of "overview of UV electrical devices and application standards" was shared, which was carried out from four aspects: UV light source device technology and market overview, UV LED application field, UV technical standard overview and UV LED standard system. At present, the main application of UV LED market is curing (the market scale in 2018 is about 120 million US dollars, accounting for about 58%); from 2021, the performance of UVC LED will gradually improve, and the disinfection and purification market will rise and gradually replace the dominant position of curing application (it is predicted that the market size in 2021 will be about 240 million US dollars, accounting for about 56%). Deep ultraviolet LED faces the technical bottleneck of poor crystal quality, low efficiency of electric injection, polarization effect and low light extraction efficiency.
last,Ruan Jun, Executive Deputy Secretary General of CSA AllianceTo sum up the meeting, he said that he was very grateful for the training courseware prepared by experts for the training meeting. He also expressed his gratitude to the technical leaders of enterprises, university teachers and students for signing up and actively interacting with each other. However, the schedule of this activity is still relatively tight. In the future, the alliance will learn from experience, set up more Q & A and interactive links, and carry out such activities according to the needs of hot spots in the industry To provide a better learning, communication and exchange platform for the industry, and promote the development and progress of the industry. Finally, I would like to thank you again for your participation and support for the alliance. This meeting was successfully completed.
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