產(chǎn)品規(guī)格書
SPECIFICATIONS
深紫外核心材料 · Sapphire/AlN外延片/模板
WAlN-SA400
2~3 μm，(002) ≤ 80 arcsec，(102) ≤ 400 arcsec
湖北深紫科技有限公司
Hubei DUVTek Co., LTD.
湖北省鄂州市梧桐湖新區(qū)鳳凰大道9號東湖高新科技創(chuàng)意城B08棟
Building B08, Donghu High-tech Innovation City, No. 9 Fenghuang Avenue, Wutong Lake New District, Ezhou, Hubei, China
| 性能 Properties | 參數(shù)值 Value |
|---|---|
| 直徑 Diameter | 2 inch (50.8±0.05 μm) |
| 襯底類型 Substrate | Sapphire |
| 襯底厚度 Substrate Thickness | 430±20 μm |
| 外延層厚度 Epilayer Thickness | 2~3 μm |
| (002) 晶體質(zhì)量 Crystal quality (FWHM of 002 XRC) | ≤ 80 arcsec |
| (102) 晶體質(zhì)量 Crystal quality (FWHM of 102 XRC) | ≤ 400 arcsec |
| 正面粗糙度 Front side roughness | ≤ 1 nm |
| 邊緣扣除 Edge exclusion | ≤ 3 mm |
| 貫穿裂紋 Through Crack | none |
| a面(11-20)取向 Surface orientation of a-plane | 0°±0.1° |
| m面(11-20)取向 Surface orientation of m-plane | 0.2°±0.1° |
| 定位邊晶向 Primary flat orientation | a-plane±0.1° |
| 定位邊長度 Primary flat length | 16±1 mm |
| 反面粗糙度 Back side roughness | 0.8±0.2 μm |